? semiconductor components industries, llc, 2010 september, 2010 -- rev. 7 1 publication order number: bf720t1/d bf720t1g, BF720T3G npn silicon transistor features ? these devices are pb--free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector -- emitter voltage v ceo 300 vdc collector -- base voltage v cbo 300 vdc collector -- emitter voltage v cer 300 vdc emitter -- base voltage v ebo 5.0 vdc collector current i c 100 madc total power dissipation up to t a =25 ? c p d 1.5 w storage temperature range t stg -- 65 to +150 ? c junction temperature t j 150 ? c thermal characteristics characteristic symbol max unit thermal resistance, junction--to--ambient (note 1) r ja 83.3 ? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. f unctional operation above the recommended operating conditions is not implied. ex tended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in 2 . sot--223 (to--261) case 318e style 1 marking diagram device package shipping ? ordering information http://onsemi.com ayw dc g g bf720t1g sot--223 (pb--free) 1000 / tape & reel a = assembly location y = year w = work week dc = device code g = pb--free package (note: microdot may be in either location) npn silicon transistor surface mount 1 ?for information on tape and reel specifications, including part orientatio n and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 1 collector 2,4 base 1 emitter 3 BF720T3G sot--223 (pb--free) 4000 / tape & reel
bf720t1g, BF720T3G http://onsemi.com 2 electrical characteristics (t a =25 ? c unless otherwise noted) characteristics symbol min max unit off characteristics collector-emitter breakdown voltage (i c =1.0madc,i b =0) v (br)ceo 300 -- vdc collector-base breakdown voltage (i c = 100 m adc, i e =0) v (br)cbo 300 -- vdc collector-emitter breakdown voltage (i c = 100 m adc, r be =2.7k ) v (br)cer 300 -- vdc emitter-base breakdown voltage (i e =10 m adc, i c =0) v (br)ebo 5.0 -- vdc collector-base cutoff current (v cb = 200 vdc, i e =0) i cbo -- 10 nadc collector--emitter cutoff current (v ce = 250 vdc, r be =2.7k ) (v ce = 200 vdc, r be =2.7k ,t j = 150 ? c) i cer -- -- 50 10 nadc m adc on characteristics dc current gain (i c =25madc,v ce =20vdc) h fe 50 -- -- collector-emitter saturation voltage (i c =30madc,i b =5.0madc) v ce(sat) -- 0.6 vdc dynamic characteristics current--gain -- bandwidth product (i c =10madc,v ce = 10 vdc, f = 35 mhz) f t 60 -- mhz feedback capacitance (v ce =30vdc,i c =0,f=1.0mhz) c re -- 1.6 pf
bf720t1g, BF720T3G http://onsemi.com 3 c, capacitance (pf) figure 1. dc current gain v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c eb @1mhz figure 2. capacitance i c , collector current (ma) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 80 70 50 30 20 10 t j =25 ? c v ce =20v f=20mhz f , current--gain ? bandwidth (mhz) t 1.0 i c , collector current (ma) figure 3. current--gain -- bandwidth v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @1mhz 60 40 v be(on) @25 ? c, v ce =10v v ce(sat) @25 ? c, i c /i b =10 v be(sat) @25 ? c, i c /i b =10 v ce(sat) @ 125 ? c, i c /i b =10 v ce(sat) @--55 ? c, i c /i b =10 v be(sat) @ 125 ? c, i c /i b =10 v be(sat) @--55 ? c, i c /i b =10 v be(on) @ 125 ? c, v ce =10v v be(on) @--55 ? c, v ce =10v figure 4. ?on? voltages i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 ? c 25 ? c -- 5 5 ? c v ce =10vdc 100 20 40
bf720t1g, BF720T3G http://onsemi.com 4 package dimensions sot--223 (to--261) case 318e--04 issue n style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 ? mm inches ? scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e -- -- e1 0 ? 1 0 ? 0 ? 1 0 ? l l 0 . 2 0 -- -- -- -- -- -- 0 . 0 0 8 -- -- -- -- -- -- *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s technical experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant int o the body, or other applications intended to support or sustain life, or for any other application in which the f ailure of the scillc product could create a situation where personal inj ury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthoriz ed application, buyer shall indemnify and hold scillc and its officers, em ployees, subsidiaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, an y claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the p art. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable copyright la ws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 bf720t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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